Aqueous solution for the formation of an indium oxide film by electroless deposition

ABSTRACT

A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the counter electrode thereby causing indium oxide film formation on the substrate is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film forming method are further provided.

This application is a continuation of application Ser. No. 09/591,639,filed Jun. 9, 2000, now abandoned which is a division of applicationSer. No. 09/172,774, filed Oct. 15, 1998, now U.S. Pat. No. 6,110,347.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method for forming an indium oxidefilm by way of electrodeposition, and a method for forming an indiumoxide film by way of electroless deposition. The present invention alsorelates to a plating solution for use in the formation of an indiumoxide film by way of electroless deposition. The present inventionfurther relates to a substrate provided with said indium oxide film fora semiconductor element and a semiconductor element provided with saidsubstrate. The semiconductor element includes a photovoltaic element(including a photoelectric conversion element), a self luminescent typeelement, a liquid crystal element, and the like.

2. Related Background Art

Indium oxide is very transparent and has an excellent electricallyconductive property similar to tin oxide and zinc oxide. In thisrespect, indium oxide has been often used for industrial purposes.Particularly, it has been used in the production of semiconductorelements having a portion to which light is impinged and a voltage isimpressed upon use. Besides, it has been also used as an antistaticcoating material which can be applied to a transparent glass member orthe like. In addition, indium oxide is superior to tin oxide withrespect to the electric conductivity, and it is superior to zinc oxidewith respect to the stability to environments, specifically, forinstance, resistance to chemicals. In this connection, indium oxide hasmore opportunities to be used in comparison with tin oxide and zincoxide. Particularly, in the case of an indium oxide incorporated withseveral percentages to some tens percentages of tin such as ITO(In₂O₃—S_(n)O₂), it is very transparent and has an extremely smallelectric resistance. Therefore, it has been widely used as a transparentand electrically conductive film in various semiconductor elements.

As for the method for the formation of an indium oxide film, there areknown vacuum deposition film-forming methods such as chemical vapordeposition (CVD, evaporation, sputtering, and MBE. Besides, a wet-typefilm forming method by so-called sol-gel processing is also known. Ofthese, the sputtering film-forming method has been preferably used,because this film-forming method is advantageous in that a uniformindium oxide film can be easily formed at a relatively low temperature.For the sputtering film-forming method, there is known a reactivesputtering film-forming method in which a target comprising indium metalis sputtered in an atmosphere composed of O₂ gas. This reactivesputtering film-forming method enables the formation of indium oxidefilm at a high speed.

However, any of these vacuum deposition film-forming methods has suchdisadvantages as will be described in the following. A specificfilm-forming apparatus provided with a vacuum vessel and an exhaustdevice is required. In the case where the film-forming apparatus islarge-sized, the film-forming apparatus unavoidably becomes costly,resulting in a rise in production cost of an indium oxide film. Inaddition, in the case of forming a large area indium oxide filmuniformly on a large area substrate, a gas introduction means includinga control system for a gas introduced, a means for controlling thetemperature of the substrate, a power supply equipment and the like mustbe specifically designed to conform the large area substrate, whereinthe film-forming apparatus becomes more costly. Further, a certainperiod of time is unavoidably consumed for evacuating the inside of thefilm forming space and also for raising or lowering the substratetemperature. In the case of producing a semiconductor element, there arevarious restrictions in the process for the production thereof.

For the film-forming method by sol-gel processing, there are problemssuch that a temperature of several hundreds centigrade is required forsintering, and a number of pores are likely to be generated in theresulting indium oxide film. In addition, it is difficult tomass-produce a uniform indium oxide film product having a sufficientlylow electric resistance.

Therefore, in view of providing particularly an optical semiconductorelement such as a photovoltaic element (or a photoelectric conversionelement) at a reasonable production cost, there is a demand forrealizing an appropriate film-forming method which enables the effectiveformation of a large area transparent and electrically conductive indiumoxide film having a uniform thickness and a uniform property on a largearea substrate at a high speed and at a low substrate temperaturewithout using large-sized apparatuses including evacuating and heatingapparatuses as in the case of the vacuum deposition film forming method.

SUMMARY OF THE INVENTION

A principal object of the present invention is to provide a method whichenables the effective formation a high quality indium oxide film by wayof electrodeposition or electroless deposition, which meets theforegoing demand and which can be employed in the production of varioussemiconductor elements.

Another object of the present invention is to provide a method forforming an indium oxide film, comprising the steps of: immersing anelectrically conductive substrate as an electrode and a counterelectrode in an aqueous solution containing at least nitrate ion andindium ion and applying an electric current between said substrate andsaid counter electrode, thereby causing the formation of said indiumoxide film on the substrate.

A further object of the present invention is to provide a substrate fora semiconductor element comprising an electrically conductive substratehaving an indium oxide film formed thereon by immersing saidelectrically conductive substrate as an electrode and a counterelectrode in an aqueous solution containing at least nitrate ion andindium ion and applying an electric current between said substrate andsaid counter electrode.

A further object of the present invention is to provide a photovoltaicelement comprising at least a first transparent and electricallyconductive layer, a semiconductor layer and a second transparent andelectrically conductive layer stacked in this order on an electricallyconductive substrate, wherein at least one of the first and secondtransparent and electrically conductive layers comprises an indium oxidefilm formed by immersing said electrically conductive substrate as anelectrode and a counter electrode in an aqueous solution containing atleast nitrate ion and indium ion and applying an electric currentbetween said substrate and said counter electrode.

A further object of the present invention is to provide an aqueoussolution containing at least nitrate ion, indium ion and tartrate foruse in the formation of an indium oxide film by way of electrolessdeposition.

A further object of the present invention is to provide an electrolessdeposition film-forming method for forming an indium oxide film,comprising the steps of: immersing a substrate in an aqueous solutioncontaining at least nitrate ion, indium ion and tartrate and maintainingsaid substrate at a temperature of 10 to 60° C., thereby depositing saidindium oxide film on said substrate.

A further object of the present invention is to provide a photovoltaicelement comprising at least a first transparent and electricallyconductive layer, a semiconductor layer and a second transparent andelectrically conductive layer stacked in this order on a substrate,wherein at least one of the first and second transparent andelectrically conductive layers comprises an indium oxide film formed byimmersing said substrate in an aqueous solution containing at leastnitrate ion, indium ion and tartrate and maintaining said substrate at atemperature of 10 to 60° C. to deposit said indium oxide film on saidsubstrate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating the constitution of anexample of a film-forming apparatus for forming an indium oxide film byway of electrodeposition in the present invention.

FIG. 2 is a x-ray diffraction pattern for an indium oxide film formed inthe present invention.

FIG. 3 is a schematic cross-sectional view illustrating theconfiguration of an example of a photovoltaic element (a solar cell) inwhich the present invention can be employed.

DESCRIPTION OF THE INVENTION AND PREFERRED EMBODIMENTS

The present inventors conducted studies through experiments in order tosatisfy the foregoing demand.

As a result, there were obtained such findings as will be described inthe following experiments. Particularly, there was obtained a findingthat the use of a specific aqueous solution containing at least nitrateion and indium ion enables the formation of a desirable, large areaindium oxide film having a uniform thickness and a uniform property on alarge area substrate at a high speed (or a high deposition rate) and ata low substrate temperature without using a large scale apparatus. Thepresent invention has been accomplished on the basis of this finding.

Description will be made of the experiments conducted by the presentinventors.

In the following experiments, there was used a film-forming apparatusshown in FIG. 1, in which a circulation system for an aqueous solutionis omitted for simplification purposes.

In FIG. 1, reference numeral 101 indicates a reaction vessel, referencenumeral 102 an electrolytic aqueous solution, reference numeral 103 anegative electrode comprising an electrically conductive substrate,reference numeral 104 a counter electrode as a positive electrode,reference numeral 105 a power source, reference numeral 106 a loadresistor, reference numeral 107 an inlet pipe, reference numeral 108 anexhaust pipe, reference numeral 109 a conduit for exhaustion, referencenumeral 110 a conduit for inlet, and reference numeral 111 a solutioncirculating pump.

As the negative electrode 103, there was used a 0.12 mm thick stainlesssteel plate 430BA whose rear face was covered with an insulating tape.As the positive electrode 104, there was used a 0.2 mm thick platinumplate having a purity of 4N. As the electrolytic aqueous solution 102,there was used an aqueous solution of indium nitrate. In order toprevent the occurrence of abnormal film growth, to the aqueous solutionwas added sucrose (disaccharide) or dextrin (polysaccharide). Instead ofthe solution circulation system which was omitted, the electrolyticaqueous solution 102 was always stirred by means of a magnetic agitator.

Experiment 1

This experiment was conducted using the film-forming apparatus shown inFIG. 1.

As the electrolytic solution 102, there was used an aqueous solutioncontaining 0.007 mol/l of indium nitrate. The temperature of theelectrolytic solution was maintained at 25° C. Under this condition,film formation was conducted by applying an electric current densitybetween the negative electrode 103 and the positive electrode 104 for 10minutes. This procedure was repeated several times, except for changingthe density of the electric current between the two electrodes to 0.6mA/cm², 0.9 mA/cm², 2.1 mA/cm², or 3.7 mA/cm² in each run. The negativeelectrode's surface exposed to the electrolytic solution after the filmformation in each run was examined. As a result, for the run where thedensity of the electric current was 0.6 mA/cm², there was observed nochange on the negative electrode's surface. For the run where thedensity of the electric current was 0.9 mA/cm², there were observedinterference colors only at a periphery of the negative electrode'ssurface. For the run where the density of the electric current was 2.1mA/cm², there were observed a transparent film exhibiting interferencecolors deposited at a central portion of the negative electrode'ssurface and an opaque cloudy film deposited at a periphery of thenegative electrode's surface. For the run where the density of theelectric current was 3.7 mA/cm², there was observed a white opaque filmdeposited on the negative electrode's surface covering the entiresurface and slightly exhibiting interference colors.

Experiment 2

This experiment was conducted in the same manner as in Experiment 1,except for changing the electrolytic solution used in Experiment 1 to anelectrolytic solution obtained by adding 6 g/l of sucrose to an aqueoussolution containing 0.007 mol/l of indium nitrate.

Particularly, while maintaining the temperature of the electrolyticsolution, film formation was conducted by applying an electric currentdensity of 2.4 mA/cm² between the negative electrode 103 and thepositive electrode 104 for 10 minutes.

Thereafter, the negative electrode's surface exposed to the electrolyticsolution after the film formation was examined. As a result, there wasobserved the deposition of a transparent film exhibiting moreinterference colors than those in the case of 2.1 mA/cm² for theelectric current density in Experiment 1 where no sucrose was used inthe electrolytic solution.

Based on this fact, there was obtained a finding that sucrosecontributes to uniform film deposition.

In addition, the film-forming speed (the deposition rate) in thisexperiment was found to be about 5 Å/sec.

Experiment 3

This experiment was conducted in the same manner as in Experiment 1,except for changing the electrolytic solution used in Experiment 1 to anelectrolytic solution obtained by adding 0.02 g/l of dextrin to anaqueous solution containing 0.007 mol/l of indium nitrate.

Particularly, while maintaining constant temperature of the electrolyticsolution, film formation was conducted by applying an electric currentdensity of 2.4 mA/cm² between the negative electrode 103 and thepositive electrode 104 for 10 minutes.

Thereafter, the negative electrode's surface exposed to the electrolyticsolution after the film formation was examined. As a result, there wasobserved the deposition of a transparent film exhibiting moreinterference colors than those in the case of 2.1 mA/cm² for theelectric current density in Experiment 1 where no sucrose was used inthe electrolytic solution, as well as in the case of Experiment 2.

Based on this fact, there was obtained a finding that dextrin alsocontributes to uniform film deposition.

Experiment 4

The film-forming procedure of Experiment 2 was repeated three times,except that the temperature of the electrolytic solution was changed to50° C., 60° C., or 70° C. in each run.

The negative electrode's surface exposed to the electrolytic solutionafter the film formation in each case was examined. As a result, therewere obtained the following findings. In each of the two runs where thetemperature of the electrolytic solution was 50° C. and 60° C., atransparent deposited film exhibiting interference colors was formed onthe entire negative electrode's surface. On the other hand, in the runwhere the temperature of the electrolytic solution was 70° C., theelectrolytic solution became opaque and precipitation was formed on thenegative electrode's surface. This precipitation was examined using ascanning electron microscope (SEM). As a result, the precipitation wasfound to contain a number of oval grains of about 1 μm in size. It isconsidered that these particles would have been grown in the liquidphase.

For the opaqueness of the electrolytic solution, it was found to faintlystart from 60° C. Thus, it was found that 60° C. for the electrolyticsolution is the upper limit.

Separately, the deposited film at 60° C. for the temperature of theelectrolytic solution was subjected to x-ray diffraction to obtain adiffraction pattern shown in FIG. 2 having. a strong specificdiffraction peak near 200 corresponding to indium oxide.

Experiment 5

The film-forming procedures of the case of maintaining the electrolyticsolution at 50° C. in Experiment 4 were repeated, except for using a 0.2mm thick indium plate having a purity of 4N as the counter electrode.

The results were similar to those obtained in Experiment 4, except forthe following points. That is, the electrolytic solution became slightlyhazy even at 50° C., and a white opaque film was lightly deposited at aperiphery of the negative electrode's surface.

On the basis of the results obtained, there were obtained the followingfindings. That is, in the case of using such an indium plate as thecounter electrode, although the indium plate has an advantage ofsupplying indium in the electrolytic solution, there is a disadvantagein that it is softened as the temperature of the surrounding atmosphereis increased, therefore requiring intense care in handling the indiumplate as the counter electrode.

The present invention has been accomplished on the basis of the findingsobtained through the experiments.

As previously described, the present invention provides a film-formingmethod which enables the formation of a desirable large area indiumoxide film having a uniform thickness and a uniform property on a largearea substrate at a high speed (a high deposition rate) and at a lowsubstrate temperature without using a large scale apparatus.

A typical embodiment of the film-forming method for forming an indiumoxide film, comprises the steps of: immersing an electrically conductivesubstrate as an electrode and a counter electrode in an aqueouselectrolytic solution containing at least nitrate ion and indium ion andapplying an electric current between said substrate and said counterelectrode, whereby causing the formation of said indium oxide film onthe substrate.

For the electric current applied to the electrically conductivesubstrate upon film formation, it is desired to be in the range of 0.1mA/cm² to 100 mA/cm² in terms of the current density.

For the temperature of the aqueous electrolytic solution upon filmformation, it is in the range of 20 to 60° C.

The counter electrode desirably comprises an electrode which isinsoluble in the aqueous electrolytic solution.

The aqueous electrolytic solution may contain a carbohydrate. Thecarbohydrate material can include saccharides.

The nitrate ion contained in the aqueous electrolytic solution may besupplied in the form of a nitric acid or in the form of a nitrate.Alternatively, it may be based on a mixture of said nitric acid andnitrate.

In the case where the nitrate ion is based on a nitric acid, when itsconcentration is beyond 0.1 mol/l which exceeds the concentration ofbase counter ions, substantially no film deposition occurs. On the otherhand, when the concentration is less than 0.01 mol/l, an effect isprovided whereby the aqueous solution is delayed in becoming hazy whenthe aqueous solution is maintained at about 50° C.

In the case where the nitrate ion is based on a nitrate, the nitrate caninclude indium nitrate, magnesium nitrate, aluminum nitrate, sodiumnitrate, potassium nitrate, and the like. In the case of using theindium nitrate, it supplies both the nitrate ion and indium ion in theaqueous solution.

The indium ion contained in the aqueous electrolytic solution may besupplied in the form of, for example, indium nitrate, indium chloride,indium sulfate, or indium hydroxide. Alternatively, it is possible tointroduce indium ion into the aqueous solution using a solutioncomprising an indium metal or a tin-indium alloy dissolved in a nitricacid. In the case of using the tin-indium alloy, since the tin isprecipitated as a tin oxide, there is provided a solution containingindium ion as the main content. For instance, there can be used asolution obtained by dissolving a 50% tin-50% indium alloy in a 0.1mol/l nitric acid solution at room temperature, followed by diluting to1/10 with pure water.

As above described, the temperature of the aqueous electrolytic solutionupon film formation is desirably in the range of 20 to 60° C. It ispossible for the temperature of the aqueous solution to in this rangeduring the film formation. In order to prevent the occurrence ofabnormal film growth, it is preferable to maintain the aqueous solutionat a higher temperature in the above range, wherein film depositionstably occurs.

As the counter electrode as the positive electrode, an electrode made ofindium may be used in order to prevent the counter electrode fromsuffering from a mechanical force and also in order to prevent thecounter electrode from suffering from a rise in temperature.

Further, in order to stably conduct film formation, it is desirable touse a counter electrode made of a material insoluble in the aqueouselectrolytic solution. Such material can include platinum, carbon, andthe like. When the counter electrode comprising carbon is used, theelectrode may comprise a titanium plate coated by a carbon powder.

Specific examples of the foregoing saccharides as the carbohydratecontained in the aqueous electrolytic solution are sucrose, dextrin,glucose, maltose, fructose, galactose, lactose, glycogen, and inulin.

As above described, the electric current applied to the electricallyconductive substrate upon the film formation is desirably in the rangeof 0.1 InA/cm² to 100 mA/cm² in terms of the current density. In orderto attain the formation of a deposited film with certainty, it isdesirable for the current density to be 0.7 MA/cm² or more. The upperlimit in this case should be determined depending upon the situation ofhydrogen generated from the aqueous electrolytic solution to hinder filmformation. However, in general, it is 20 mA/cm² or less.

The electrically conductive substrate used as the negative electrode hasan indium oxide film formed thereupon. For the electrically conductivesubstrate, there is no particular restriction as long as it iselectrically conductive and stable to the aqueous electrolytic solution.Specific examples are metal members made of a metal such as Fe, Cu, orAl, or an alloy such as stainless steel or brass; electricallyconductive metallic members coated by a metal such as Au, Ag, Cu, or Al;non-electrically conductive members made of a glass, ceramic, orsynthetic resin, coated with a metal such as Au, Ag, Cu, or Al.

Alternatively, the electrically conductive substrate may comprise asemiconductor member as long as it allows surface reaction with theelectric current applied as above described. Such semiconductor membercan include a crystalline silicon member, an amorphous silicon member, amicrocrystalline silicon member, and these members doped with a p-typeor n-type dopant; group III-V semiconductor members such as a GaAsmember, an InP member, and the like; group II-VI semiconductor memberssuch as a CdS member, a CdSe member, and the like. Besides, it ispossible to use a tin oxide member or a zinc oxide member. Further, itis also possible to use an indium oxide member or an ITO member, formedby a sputtering process, and having a different morphology.

The electrodeposition film-forming method for the formation of an indiumoxide film according to the present invention may be effectivelyemployed in the production of a photovoltaic element including a solarcell.

A typical embodiment of a photovoltaic element in which the presentinvention is applied comprises at least a first transparent andelectrically conductive layer, a semiconductor layer and a secondtransparent and electrically conductive layer stacked in this order onan electrically conductive substrate, wherein at least one of the firstand second transparent and electrically conductive layers comprises anindium oxide film formed by immersing said electrically conductivesubstrate as an electrode and a counter electrode in an aqueous solutioncontaining at least nitrate ion and indium ion and applying an electriccurrent between said substrate and said counter electrode.

FIG. 3 is a schematic cross-sectional view illustrating an example ofsuch a photovoltaic element (used as a solar cell).

The photovoltaic element (the solar cell) shown in FIG. 3 comprises anoptically reflecting layer 302 (or a back reflecting layer), a firsttransparent and electrically conductive layer 303, a semiconductoractive layer 304, a second transparent and electrically conductive layer308, and a collecting electrode 309 disposed in this order on anelectrically conductive substrate 301, wherein a power output terminal(not shown) is electrically connected to the collecting electrode 309,and another power output terminal (not shown) is electrically connectedto the electrically conductive substrate 301.

The semiconductor active layer 303 in the photovoltaic element (thesolar cell) shown in FIG. 3 has a single cell structure having a pinjunction, comprising an n-type semiconductor layer 305, an i-typesemiconductor layer 306 and a p-type semiconductor layer being stackedin this order from the substrate side. But this is not imperative. Thesemiconductor active layer 303 may be a stacked structure comprising aplurality of pin junction cells. Alternatively, it may be a stackedstructure having an np junction or a shottky type junction. This will bedetailed later.

In the following, description will be made of each constituent of thephotovoltaic element (the solar cell) shown in FIG. 3.

Electrically Conductive Substrate

The electrically conductive substrate 301 serves as a substrate having aphysical strength to support a photovoltaic element disposed thereon, aswell as the means of electrical connection with the element.

For the electrically conductive substrate 301, there is no particularrestriction as long as it has an electrically conductive surface.Specifically, it may be an electrically conductive member composed of ametal such as Al, Cu, Fe, Al, Ni, or the like, or an electricallyconductive member composed of an alloy of these metals such as stainlesssteel, brass, or the like. Besides, metal members coated with anelectrically conductive metallic material such as a Ni-plated steelmember may be also suitable.

The electrically conductive substrate 301 may be a film or sheet made ofa synthetic resin or a sheet made of glass or ceramic, deposited with anelectrically conductive film on at least a surface thereof so as to havean electrical connection with the element disposed thereon.

The electrically conductive substrate 301 may be shaped in anappropriate form as long as a given layer of the photovoltaic elementcan be properly formed thereon. Particularly, when the semiconductoractive layer is composed of an amorphous silicon material, theelectrically conductive substrate may be shaped in an appropriate formsuch as a sheet-like form, a plate-like form, or a roll form. Besides,it may be shaped in a roof tile-like form or an external wall form whichis used for a building.

Optically Reflecting Layer

The optically reflecting layer 302 (hereinafter referred to as“reflecting layer”) disposed on the electrically conductive substrate301 serves to reflect light passed through the semiconductor activelayer 304 back into the semiconductor active layer so that the light isefficiently utilized by being absorbed by the semiconductor material ofthe semiconductor active layer, thereby improving the photoelectricconversion efficiency of the photovoltaic element (the solar cell).Particularly, the reflecting layer comprises a layer having a sufficientreflectivity against light in a region where the semiconductor materialof the semiconductor active layer exhibits translucency. The light insuch region which exhibits translucency may be from 600 nm to 1100 nmwhen the semiconductor material of the active layer comprises anamorphous silicon material.

The back reflecting layer may comprise a single-layered structure or atwo-layered structure comprising a metal selected from the groupconsisting of Ag, Cu, Al, and the like.

The reflecting layer 302 desirably has a roughened surface in order toeffectively utilize incident light. This situation will be laterdescribed in more detail.

The reflecting layer may be omitted when the electrically conductivesubstrate 301 is composed of Cu which exhibits a sufficientreflectivity.

The reflecting layer may be properly formed by a conventionalfilm-forming technique such as resistant heating evaporation, electronbeam evaporation or sputtering.

First Tranparent and Electrically Conductive Layer

The first transparent and electrically conductive layer 303 is requiredto be transparent against the light of the translucent region of theforegoing semiconductor material and to exhibit conductivity to anelectric current outputted from the semiconductor junction of thesemiconductor active layer 304. The conductivity herein depends upon thethickness of the first transparent and electrically conductive layer,but it is required to be less than the internal electric resistance ofthe semiconductor junction of the semiconductor active layer.

For instance, when the first transparent and electrically conductivelayer 303 has a thickness of 1 1 μm, the conductivity thereof isdesirably about 105 Ωcm or less.

A combination of the optically reflecting layer 302 and the firsttransparent and electrically conductive layer 303 establishes a backreflector. The back reflector serves not only to reflect the light inthe region where the semiconductor material of the semiconductor activelayer exhibits translucency back into the semiconductor active layer sothat the light is further absorbed by the semiconductor material butalso to prolong an optical path of the reabsorbed light by providingoptical irregularities at the surface thereof to make the reflectedlight scattered. This is generally referred to as “light confinement”.

The optical irregularities may be mechanical irregularities,approximately corresponding to light wavelength, which are providedeither at the surface of the optically reflecting layer 302 or at thesurface of the first transparent and electrically conductive layer 303.Alternatively, optical irregularities may be provided in the firsttransparent and electrically conductive layer 303. The opticalirregularities in this case may be based on a polycrystal materialcomprising a plurality of crystal grains each having a sizeapproximately corresponding to light wavelength, wherein the polycrystalmaterial has varied refractive indices at the interfaces of the crystalgrains, resulting in an increase in the optical path in thesemiconductor active layer.

Semiconductor Active Layer

The semiconductor active layer 303 functions to conduct photoelectricconversion, whereby incident light generates an electromotive force. Asabove described, the semiconductor active layer 303 in the photovoltaicelement (the solar cell) comprises a single cell structure (having athree-layered structure) having a pin junction comprising an n-typesemiconductor layer 305, an i-type semiconductor layer 306 and a p-typesemiconductor layer 307 being stacked in this order. Any of these threesemiconductor layers may be composed of an amorphous siliconsemiconductor material. The p-type semiconductor layer 307 may becomposed of a microcrystalline silicon semiconductor material. Thisconfiguration is only for explanatory purposes and, therefore, is notlimitative. The semiconductor active layer 304 may be structured tocomprise a plurality of such cells having a pin junction being stacked.As specific examples in this case, there can be mentioned a tandemstructure comprising two cells having a pin junction being stacked, atriple structure comprising three cells having a pin junction beingstacked, and a quadruple structure comprising four cells having a pinjunction being stacked.

The above silicon-containing semiconductor layers constituting thesemiconductor active layer may contain hydrogen atoms (H) and/or halogenatoms (X) such as fluorine atoms (F) in order to compensate danglingbonds contained therein. Further, they may contain a bandgap-controlling element such as carbon (C), nitrogen (N), oxygen (O) orgermanium (Ge).

Disposing either the p-type semiconductor layer or the n-typesemiconductor layer on the side through which light is impinged isoptional. In the case where the p-type semiconductor layer is positionedon the side through which light is impinged, namely on the side oppositethe foregoing back reflector, an electron travels in the semiconductoractive layer from the light incident side toward the back reflectorside, and a hole travels in the semiconductor active layer from the backreflector side toward the light incident side. Since the absorption oflight mostly occurs at the surface of the light incident side of thesemiconductor active layer, it is advantageous to use this structure foran amorphous silicon material (including a microcrystalline siliconmaterial), which excels in electron mobility.

In the case where the p-type semiconductor layer positioned on the lightincident side is constituted by an amorphous silicon material doped witha dopant comprising boron (B), the p-type semiconductor layer has anarrow band gap. Therefore, in terms of light absorption, it is inferiorto the n-type semiconductor layer when positioned on the light incidentside instead of the p-type semiconductor layer. As above described, thep-type semiconductor layer may be composed of a microcrystalline siliconsemiconductor material in order for the p-type semiconductor layer tohave an improved light transmitting property. In any case, positioningeither the p-type semiconductor layer or the n-type semiconductor layeris dependent upon the related factors including the fabricationapparatus.

The semiconductor active layer 304 may be designed to have a pn junctioncomprising a crystalline silicon semiconductor material or a shottkytype junction. In any of these two cases, the semiconductor active layermay comprise a plurality of cells having a pn junction or a shottky typejunction being stacked, as well as in the foregoing case.

The semiconductor active layer may be properly formed by a conventionalfilm-forming technique.

Second Transnarent and Electrically Conductive Layer

The second transparent and electrically conductive layer 308 serves asan upper electrode and also as an anti-reflection layer in the case of asolar cell.

The second transparent and electrically conductive layer 308 is designedto have a thickness of about 700 Å (in the case where the refractiveindex is about 2). In view of this, the second transparent andelectrically conductive layer desirably an electric resistivity ofpreferably 10⁻¹ Ωcm or less or more preferably 10⁻³ Ωcm or less.

Collecting Electrode

The collecting electrode 309 (or the grid electrode) is used in the casewhere the second transparent and electrically conductive layer 308 isinsufficient in flowing an electric current, by disposing it on thesecond transparent and electrically conductive layer 308.

The collecting electrode serves to effectively collect an electriccurrent generated by virtue of a photoelectromotive force on the secondtransparent and electrically conductive layer.

The collecting electrode is desirably in the form of a comb.

The collecting electrode is formed of a material which has a lowelectric resistance. Specific examples of such material are evaporatedmetallic materials of Ag, Au, Al, or Cr, and metallic pastes obtained bymixing a colloid of carbon, Ag, or Cu with a binder resin.

The pattern and constituent of the collecting electrode 309 should bedetermined depending upon the related factors including the electricresistance of the second transparent and electrically conductive layer309, the size of the photovoltaic element (the solar cell), and a moduleprepared using the photovoltaic element (the solar cell).

The foregoing photovoltaic element (the solar cell) described above withreference to FIG. 3 is structured so as to provide characteristicsdesired therefor. However, it is not always sufficient as a continuouspower supply source. Therefore, in order to improve durability toenvironments where it is used and also in order to improve ease ininstallation and reliability upon installation at a desired place, it isprocessed, for instance, as follows. That is, the photovoltaic element(the solar cell) is converted into a module by sealing it by a sealingresin, followed by providing aback reinforcing member at the back side.If necessary, the resultant module is processed to have holes or bent tohave bent portions for the installation.

Film-Forming Method by Electroless Deposition

As previously described, the present invention includes a film-formingmethod by electroless deposition (this film-forming method will behereinafter referred to as “electroless deposition film-forming method”)for forming an indium oxide film.

In the following, the electroless deposition film-forming method will bedetailed.

A typical embodiment of the electroless deposition film-forming methodfor forming an indium oxide film comprises the steps of: immersing asubstrate in an aqueous solution containing at least nitrate ion, indiumion and tartrate and maintaining said substrate at a temperature of 10to 60° C., thereby depositing said indium oxide film on said substrate.

The aqueous solution used in this method will be hereinafter referred toas “plating aqueous solution” in order to distinguish from the aqueoussolution used in the foregoing film-forming method by electrodeposition.

Description will be made of the aqueous solution (the plating aqueoussolution).

As a source of providing nitrate ion in the plating aqueous solution,there can be used an appropriate source as long as it desirably suppliesnitrate ion in the plating aqueous solution. As preferable examples ofsuch nitrate ion-supplying source, there can be mentioned nitric acidand nitrates such as indium nitrate, sodium nitrate, potassium nitrate,lithium nitrate, aluminum nitrate, and ammonium nitrate. Of thesenitrates, indium nitrate is particularly preferable.

For the concentration of the nitrate ion in the plating aqueoussolution, there is no particular restriction. However, in general, it ispreferably in the range of 0.001 to 0.5 mol/l, or more preferably in therange of 0.01 to 0.1 mol/l. As long as the concentration of the nitrateion is more than 0.001 mol/l, indium hydroxide is prevented from beingprecipitated in the plating aqueous solution. When the concentration ofthe nitrate ion is less than 0.5 mol/l, film deposition desirablyproceeds at a practical rate.

As a source of the indium ion, an appropriate source may be used as longas it desirably supplies indium ion in the plating aqueous solution. Aspreferable examples of such indium ion-supplying source, there can bementioned indium salts such as indium nitrate, indium sulfate, andindium chloride. Of these indium salts, indium nitrate is particularlypreferable because it supplies both nitrateion and indium ion.

For the concentration of the indium ion in the plating aqueous solution,there is no particular restriction. However, in general, it ispreferably in the range of 0.001 to 0.5 mol/l, or more preferably in therange of 0.01 to 0.1 mol/l. As long as the concentration of the indiumion is more than 0.001 mol/l, film deposition desirably proceeds at apractical rate. When the concentration of the indium ion is less than0.5 mol/l, unnecessary materials are prevented from being precipitatedin the plating aqueous solution, and no coagulated material is depositedon an indium film deposited on the substrate.

For the tartrate contained in the plating aqueous solution, anappropriate tartrate may be optionally used. As preferable examples ofsuch tartrate, there can be mentioned sodium tartrate, potassiumtartrate, sodium-potassium tartrate, potassium hydrogen tartrate, andcalcium tartrate. Of these tartrates, sodium tartrate andsodium-potassium tartrate are particularly preferable.

For the concentration of the tartrate in the plating aqueous solution,there is no particular restriction. However, in general, it ispreferably in the range of 0.00001 to 0.1 mol/l, or more preferably inthe range of 0.001 to 0.01 mol/l. As long as the concentration of thetartrate is more than 0.00001 mol/l, deposition of an indium oxide filmon the substrate efficiently proceeds. When the concentration of thetartrate is less than 0.01 mol/l. the plating aqueous solution does notcloud and, in turn, cause the formation of a deposited film comprisingan aggregate of opaque powdery materials.

In order to prevent the plating aqueous solution from becoming cloudyduring film formation, it is more desirable for the concentration of thetartrate to be 1/2 to 1/5 of the concentration of the indium ion. Thisis based on a finding obtained through experiments.

For the reason for the above situation, it is considered that carboxyland/or an alcoholic hydroxyl which are dissociated from the tartaratecontribute to oxidizing the indium ion. Therefore, the presence of anexcessive amount of the tartarate causes a precipitate of the tartaratein the plating aqueous solution. Particularly, in the case of theelectroless deposition process, there cannot be supplied any externalenergy for the oxidation of the indium ion as in the case of theelectrodeposition process. Therefore, it is desirable to control theconcentration of the plating aqueous solution as above described.

Description will be made of the film-forming conditions in theelectroless deposition film-forming method for forming an indium oxidefilm.

The temperature of the plating aqueous solution upon film formation ispreferably in the range of 10 to 60° C., or more preferably in the rangeof 30 to 50° C. It is desirable for the plating aqueous solution to bemaintained at a higher temperature. However, in the case where thetemperature of the plating aqueous solution is beyond 60° C., theplating aqueous solution is likely to become cloudy, thereby renderinguniform film growth difficult. In the case where the temperature of theplating aqueous solution is less than 10° C., a film deposited on thesubstrate is likely to be insufficient in adhesion to the substrate andthus, inferior in terms of physical strength.

The pH value of the plating aqueous solution is different depending uponthe kind of solute or temperature. However, in general, it is desirablein the range of 3 to 9. By maintaining the pH value of the platingaqueous solution in this range, it is possible to prevent the occurrenceof problems such as insubstantial film deposition and precipitateformation, which hinder uniform film deposition.

In order to control the pH value of the plating aqueous solution asabove described, a small amount of an acid or base is added to theplating aqueous solution. The acid can include sulfuric acid, nitricacid, hydrochloric acid, and acetic acid. The base can include sodiumhydroxide, potassium hydroxide, and ammonium hydroxide.

The film-forming speed (the deposition rate) is generally 0.01 to 10Å/second. Particularly, the deposition rate is high at the initial stageof the film formation, and thereafter, it is gradually decreased andeventually becomes constant at a given value.

The plating aqueous solution is retained in an appropriate vessel madeof a stainless steel or glass. Alternatively, it is possible to use avessel made of Cu or Al for retaining the plating aqueous solution whosepH value is relatively high. In order to prevent deposition of anunnecessary film, it is desirable for any of these vessels to have aninner wall coated by an oxide material other than indium oxide or apassive material.

For the substrate on which an indium oxide film is to be deposited, anappropriate substrate may be optionally used. For instance, thesubstrate may be a metallic member made of a metal such as Fe, Pt, Ni,or the like or an alloy such as stainless steel. Alternatively, it maybe a member made of a synthetic resin, glass or ceramic.

The surface of the substrate on which an indium oxide film is to bedeposited is desirably clean and highly active in terms of triggeringfilm formation. In this respect, in the case of using a substrate whichdoes not have such a surface, it is desirable for said substrate to besubjected to surface treatment by way of acid cleaning or alkalicleaning to remove an oxide layer present on the surface or to surfacetreatment by way of sensitizer-activator processing. Thesensitizer-activator processing may be conducted by a conventionalmanner using stannous chloride or palladium chloride (see, for instance,Electroless Plating, edited by Denki-Tokin Kenkyukai, P. 135, publishedby Daily Industry Newspaper). For the chemicals used in thesensitizer-activator processing, there is commercially available asensitizer-activator S-1 or P-1 (trade name).

The electroless deposition film-forming method of the present inventioncan be employed, for instance, in anti-static finishing treatment andalso in the production of a photovoltaic element (a solar cell) or anelectrophotographic light receiving member, where insufficient points inthe prior art are desirably improved.

This situation will be described in more detail in the following.

Anti-static Finishing Treatment

The antistatic finishing treatment is used for preventing a glass memberfrom gathering dust due to static electricity. It is also used in theproduction of an electronic device. Particularly, in the case of anelectronic device, electrostatic charging often causes the electronicdevice to attract dust and to suffer further electrostatic charging,wherein a high voltage is applied to its electronic components, wherebythe components are damaged. In order to prevent this problem, in theproduction of an electronic device, its electronic components andperipheral members can be subjected to anti-static finishing treatment.

The glass member is extremely likely to suffer from electrostaticcharging, because its principal constituent is silicon oxide. Theelectronic components and peripheral members for an electronic device inrecent years are mostly made of plastics and, therefore, are alsoextremely likely to suffer from electrostatic charging. In thisconnection, these are usually treated as will be described in thefollowing, prior to using them in practice. That is, their surfaces aresubjected to substitution treatment by hydrophilic agent of a metalalkoxide or the like or to electroconductive treatment by way of coatingwith an electrically conductive carbon material, a metal or the like.

However, in any of the above anti-static finishing treatments, in manycases, a problem of coloring occurs. The components which are used in ainconspicuous part are less problematic even when they are colored.However, the components which are used in an indicative part,particularly, as a panel cover or the like are not suitable whenundesirably colored.

Additionally, in order to coat an electronic component with atransparent and electrically conductive film composed of an indium oxideor ITO (comprising an indium oxide doped with tin in an amount ofseveral wt. %), a vacuum apparatus or a sputtering method is usuallyemployed. However, these are disadvantageous in that the apparatus usedin any of them is remarkably costly, and they are not practical intreating a small electronic component.

In this connection, for such a colored electronic component which ispositioned in an indicative part of an electronic device, aninconspicuously thinner coating is often employed, sacrificed withrespect to the conductivity.

An indium oxide film formed in accordance with the electrolessdeposition film-forming method of the present invention can be providedat a reasonable production cost, because it can be produced in a simplemanner using a less expensive fabrication apparatus, and the indiumoxide film excels in transparency. Therefore, the indium oxide film issuitable for use, particularly as a cover for an indicative part of anelectronic device. In addition, in the electroless depositionfilm-forming method of the present invention, the treating temperatureis not high, and therefore, various members including electroniccomponents can be desirably treated in the present invention.

Photovoltaic Element (Solar Cell)

The electroless deposition film-forming method of the present inventioncan be effectively employed in the production of a photovoltaic element,particularly a solar cell.

Typically, in a solar cell (excluding a point contact type solar cellhaving a specific configuration) in which the present invention can beapplied, its surface through which light is impinged is used as anelectrode.

By the way, for the point contact type solar cell, the semiconductormaterial used therein is required to have a long lifetime and a largemobility with respect to an electron and hole. A desirable contact typesolar cell is difficult to attain at the present time unless a singlecrystalline silicon material of a high grade is used as thesemiconductor material.

Now, for a polycrystalline silicon material, an amorphous Si material,an amorphous SiGe material, a microcrystalline Si material, and apolycrystalline CuInSe material which are often used as a semiconductormember in the above-described solar cell, the surface of thesemiconductor member on the side through which light is impinged isrequired to have a transparent and electrically conductive film formedthereon as an electrode.

This transparent and electrically conductive film, also serving as alight reflection preventive layer, is usually made to have an opticalthickness corresponding to 1/4 of a wavelength giving a maximum value inthe sensitivity spectrum of the semiconductor. In more detail, as thesensitivity maximum wavelength is in the range of about 500 nm to about1 μm, the above optical thickness is in the range of about 1200 Å toabout 2500 Å. The refractive index of the transparent and electricallyconductive film is generally about 2. In this connection, the filmthickness of the transparent and electrically conductive film is in therange of about 600 Å to about 1300 Å.

The presently known transparent and electrically conductive materialsare indium oxide, ITO, zinc oxide, tin oxide, alloys of these, and thoseincorporated with gallium oxide or nitrides. Of these, indium oxide andITO are the highest in terms of conductivity, where the highest valuewith respect to the conductivity is about 1×10⁴ S/cm.

Hence, it is difficult to attain a conductivity which is higher than theabove value at the present time.

This makes it necessary to provide a grid electrode or an integratedelectrical connection, having a width of some millimeters to somecentimeters, on the transparent and electrically conductive film formedon the semiconductor member. However, the grid electrode does not allowlight to transmit therethrough, and because of this, a shadow of light(that is, sunlight) is unavoidably formed, resulting in a loss in theutilization efficiency of incident light, which leads to a decrease inthe photoelectric conversion efficiency of the solar cell.

In order to sufficiently utilize incident light in the solar cell, thetransparent and electrically conductive film is required to be highlytransparent and to have a sufficiently high conductivity.

In addition, in the case of producing a solar cell using a film-formingsystem using a vacuum deposition apparatus; expenses for the facilityinvestment and maintenance are large, and therefore, a solar cell thusobtained is unavoidably costly.

However, the electroless deposition film-forming method of the presentinvention enables the efficient formation of a high quality indium oxidefilm having an excellent transparency and a sufficiently highconductivity, which is similar to that formed by way of sputtering, in asimple manner using a less expensive fabrication apparatus. Thus, theindium oxide film can be provided at a reasonable production cost. Thissituation enables the production of a solar cell at a reasonableproduction cost.

Electrophotographic Light Receiving Member

An electrophotographic photosensitive member comprises a photoconductivelayer formed on an electrically conductive substrate.

The electrophotographic photosensitive member is used in anelectrophotographic apparatus for forming an electrostatic latent imageby subjecting its surface to charging to a prescribed electricpotential, followed by subjecting to image exposure, wherein only in aportion of the surface having been subjected to light exposure, aphotocarrier is generated, followed by moving to compensate the chargedelectric potential. The photoconductive layer of the electrophotographicphotosensitive member generally comprises a photosensitive material or acarrier transportation material in which either a hole or an electron isthe major constituent. Particularly, for instance, in the case where theelectrophotographic photosensitive member is of an organic series, ahole acts as a transportation carrier in many cases.

In the case where the electrophotographic photosensitive member is foruse in a laser beam printer, the electrophotographic photosensitivemember is required to sufficiently form an electrostatic latent image ina region of red light in order to have a sensitivity to a semiconductorlaser. This requirement can be satisfied by making the photoconductivelayer thereof comprise a functionally divided layer structure comprisinga charge generation layer and a charge transportation layer, where theelectrophotographic photosensitive member has an improved stability andan improved lifetime.

Here, the surface of the electrophotographic photosensitive member whichis subjected to charging comprises a free surface of the functionallydivided layer structure, where a, charge can be relatively easilyprevented from invading the photoconductive layer. However, it isnecessary to a specific due care about the substrate side of theelectrophotographic photosensitive member. That is, for instance, in thecase where negative charging is preferred because of the characteristicsof a toner used, the charge generation layer is positioned on thesubstrate side and the charge transportation layer is positioned on thecharge generation layer. In this case, if a hole (as a carrier) isinjected from the substrate side, the surface potential is neutralizedto significantly disturb the contrast of the electrostatic image on thesurface (the free surface) of the electrophotographic photosensitivemember. In order to prevent this problem from occurring, it is necessaryto interpose a hole injection prohibition layer (as a blocking layer)between the substrate and the charge generation layer.

Separately, when an electron (as another carrier) remains in thephotoconductive layer (or the charge transportation layer), a ghost islikely to occur. In order to prevent this problem from occurring, it isnecessary for the electrophotographic photosensitive member to beconfigured so that such an electron escapes to the substrate side.

Now, for the foregoing hole injection inhibition layer (the blockinglayer), it is very effective that the layer is comprised of an n-typesemiconductor material having a large band gap. Presently, an extremelyfew n-type organic semiconductor materials are available. In thisrespect, as the foregoing semiconductor material to constitute the holeinjection inhibition layer (the blocking layer), a transparent andelectrically conductive film made of an inorganic material,specifically, an inorganic oxide material is stable and quite suitable.However, as well as in the foregoing case of the photovoltaic element(the solar cell), in the case where this transparent and electricallyconductive film is formed by way of a vacuum film-forming process suchas sputtering in the production of an electrophotographic photosensitivemember, the resulting electrophotographic photosensitive member becomesunavoidably costly.

For the formation of an inorganic transparent and electricallyconductive film, there has been proposed a sol-gel film-forming method.But this film-forming method is still problematic in that desirable filmformation cannot be stably conducted.

The present invention desirably solves the above problems. Particularly,in accordance with the electroless deposition film-forming method, it ispossible to efficiently form an effective blocking layer (a holeinjection inhibition layer) comprising a high quality indium film as thetransparent and electrically conductive film. The indium oxide filmformed in accordance with the present invention is never problematiceven in the case of producing an organic electrophotographicphotosensitive member. That is, the indium oxide film is neitherdeteriorated nor eluted in the successive coating step. Hence, thepresent invention provides a desirable electrophotographicphotosensitive member at a reasonable production cost.

EXAMPLES

The present invention will be described in more detail with reference toexamples. It should be understood that these examples are only forillustrative purposes, and they are not intended to restrict the scopeof the present invention.

In the following, Examples 1 to 4 are of the electrodepositionfilm-forming method of the present invention, and Examples 5 to 11relate to the electroless deposition film-forming method of the presentinvention.

Example 1

In this example, there was prepared a solar cell (a photovoltaicelement) having the configuration shown in FIG. 3 whose firsttransparent and electrically conductive layer (303) comprising an indiumoxide film was formed in accordance with the electrodepositionfilm-forming method of the present invention. This solar cell wasprepared in the following manner.

Provision of Substrate

There was provided a well-cleaned stainless steel 430BA plate (tradename) as the electrically conductive substrate 301.

Formation of Optically Reflecting Layer

On the substrate 301, there was formed a 1000 Å thick Ag-film as theoptically reflecting layer 302 by DC magnetron sputtering withoutparticularly heating the substrate. As a result of optically examiningthe surface of the Ag-film, it was found to be a mirror surface having areflectivity of more than 98% over the wavelength range of from 400 to1100 nm.

Formation of First Transparent and Electrically Conductive Layer

The substrate 301 having the Ag-film as the optically reflecting layer302 formed thereon was positioned in the film-forming apparatus shown inFIG. 1 as the negative electrode (103). In accordance with thepreviously described procedures for forming an indium film by way ofelectrodeposition, there was formed a 5000 Å thick indium oxide film asthe first transparent and electrically conductive layer 303 on theAg-film as the optically reflecting layer 302, wherein an aqueoussolution containing indium nitrate at a concentration of 0.02 mol/l wasused as the aqueous solution (102), and film formation was conducted for25 minutes while maintaining the aqueous solution (102) at 30° C. As aresult of optically examining the surface of the indium oxide film, itwas found to be slightly hazy and textured.

Formation of Semiconductor Active Layer

The resultant obtained in the above was positioned in a conventional RFplasma CVD apparatus, wherein a semiconductor active layer 304 having apin junction was formed on the first transparent and electricallyconductive layer 303 (comprising the indium oxide film) by sequentiallyforming a 250 Å thick n-type amorphous silicon semiconductor layer 305with the use of SiH₄ gas, H₂ gas and PH₃ gas at respective flow rates of5 sccm, 10 sccm, and 0.001 sccm; a 2000 Å thick i-type amorphous siliconsemiconductor layer 306 with the use of SiH₄ gas and H₂ gas atrespective flow rates of 5 sccm and 10 sccm; and a 150 Å thick p-typemicrocrystalline silicon semiconductor layer 307 with the use of SiH₄,gas, H₂ gas and BF₃, gas at respective flow rates of 5 sccm, 1500 sccm,and 5 sccm.

Formation of Second Transparent and Electrically Conductive Layer

On the p-type microcrystalline silicon semiconductor layer 307 of thesemiconductor active layer 304, there was formed a 660 Å thick ITO filmas the second transparent and electrically conductive layer 308 by meansof a conventional heat resistance evaporation process wherein an Insource and a Sn source were evaporated in an O₂ atmosphere, where theITO film exhibited blue interference color. At this time, the ITO filmwas formed in a rotund form, so as to have an effective area of 0.25 cm²when a grid electrode (a collecting electrode) is formed thereon.

Formation of Grid Electrode (Collecting Electrode)

On the ITO film as the second transparent and electrically conductivelayer 308, an Ag-film was formed in a cruciate form at a thickness of3000 Å as the grid electrode 309 (the collecting electrode) by means ofa conventional heat resistance evaporation process.

Thus, there was obtained a solar cell (a photovoltaic element).

Using a conventional solar simulator, the resultant solar cell wassubjected to measurement with respect to I-V characteristics underpseudo sunlight having an intensity of 100 mW/cm² and a spectrum of AM1.5. As a result, the solar cell was found to have a short-circuitcurrent density of 11.1 mA/cm², an open-circuit voltage of 0.95 V, afill factor (F.F.) of 0.68, and a photoelectric conversion efficiency of7.2%.

Separately, for comparison purposes, the following comparative examplewill be described.

Comparative Example 1′

The procedures for the preparation of the solar cell in Example 1 wererepeated, except that as the first transparent and electricallyconductive layer 303, a 5000 Å thick indium oxide film by DC magnetronsputtering without particularly heating the substrate was used to obtaina solar cell.

The resultant solar cell was evaluated in the same manner as in Example1.

As a result, the solar cell was found to have a short-circuit currentdensity of 10.5 mA/cm², an open-circuit voltage of 0.96 V, a fill factor(F.F.) of 0.67, and a photoelectric conversion efficiency of 6.8%.

Based on the results obtained in Example 1 and Comparative Example 1′,it is understood that the solar cell prepared by employing the presentinvention apparently surpasses the comparative solar cell, particularlyin terms of photoelectric conversion efficiency.

Example 2

In this example, there was prepared a solar cell (a photovoltaicelement) having the configuration shown in FIG. 3 whose firsttransparent and electrically conductive layer (303) comprising an indiumoxide film was formed in accordance with the electrodepositionfilm-forming method of the present invention. This solar cell wasprepared in the following manner.

Provision of Substrate

There was provided a well-cleaned stainless steel 430BA plate (tradename) as the electrically conductive substrate 301.

Formation of Optically Reflecting Layer

On the substrate 301, there was formed a twolayered optically reflectinglayer 302 in the following manner.

First, on the substrate 301, there was formed a 1000 A thick Al-film byDC magnetron sputtering without particularly heating the substrate. As aresult of optically examining the surface of the Al-film, it was foundto be a mirror surface having a reflectivity of more than 89% over thewavelength range of from 400 to 1100 nm.

Then, on the Al-film thus formed, there was formed a 1000 A thick zincoxide film by DC magnetron sputtering without particularly heating thesubstrate. As a result of examining the surface of the zinc oxide film,it was found to exhibit green to pink interference color. The surfacewas found to be a mirror surface.

Formation of First Transparent and Electrically Conductive Layer

The substrate 301 having the two-layered optically reflecting layer 302(comprising the Al-film and zinc oxide film) formed thereon waspositioned in the film-forming apparatus shown in FIG. 1 as the negativeelectrode (103). In accordance with the previously described proceduresfor forming an indium film by way of electrodeposition, there was formeda 10000 thick indium oxide film as the first transparent andelectrically conductive layer 303 on the zinc oxide film of thetwo-layered optically reflecting layer 302, wherein an aqueous solutionobtained by providing an aqueous solution (a) containing indium nitrateat a concentration of 0.02 mol/l and adding 6 g/l of sucrose to saidaqueous solution (a) was used as the aqueous solution (102), and filmformation was conducted for 20 minutes while maintaining the aqueoussolution (102) at 50° C.

As a result of optically examining the surface of the indium oxide filmthus formed, it was found to be slightly hazy and textured.

Formation of Semiconductor Active Layer

In accordance with the procedures for forming the semiconductor activelayer 304 in Example 1, there was formed a 2400 A thick semiconductoractive layer 304 having a pin junction on the first transparent andelectrically conductive layer 303 (comprising the indium oxide film).

Formation of Second Transparent and Electrically Conductive Layer

On the p-type microcrystalline silicon semiconductor layer 307 of thesemiconductor active layer 304, there was formed a 660 Å thick ITO filmas the second transparent and electrically conductive layer 308, inaccordance with the procedures for forming the second transparent andelectrically conductive layer 308 in Example 1.

Formation of Grid Electrode (Collecting Electrode)

On the second transparent and electrically conductive layer 308, therewas formed a cruciate grid electrode 309 (a collecting electrode) inaccordance with the procedures for the formation of the grid electrode309 in Example 1.

For the resultant thus obtained, a pair of power output connections wereprovided.

Thus, there was obtained a solar cell (a photovoltaic element).

The resultant solar cell was evaluated in the same manner as in Example1.

As a result, the solar cell was found to have a short-circuit currentdensity of 11.3 mA/cm², an open-circuit voltage of 0.97 V, a fill factor(F.F.) of 0.68, and a photoelectric conversion efficiency of 7.5%.

Based on the evaluated results, it is understood that the use of theback reflector comprising the two-layered optically reflecting layer 302and the first transparent and electrically conductive layer 303(comprising the indium oxide film) provides a superior effect. For thereason why the solar cell obtained in this example has an improvedopen-circuit voltage, it is believed that there is a slight occurrenceof shunt.

Example 3

In this example, there was prepared a solar cell (a photovoltaicelement) having the configuration shown in FIG. 3 whose firsttransparent and electrically conductive layer (303) comprising an indiumoxide film was formed in accordance with the electrodepositionfilm-forming method of the present invention. This solar cell wasprepared in the following manner.

Provision of Substrate

There was provided a well-cleaned stainless steel 430BA plate (tradename) as the electrically conductive substrate 301.

Formation of Optically Reflecting Layer

On the substrate 301, there was formed a two-layered opticallyreflecting layer 302 comprising a 1000 Å thick Al-film and a 1000 Åthick zinc oxide film being stacked in this order from the substrateside, in accordance with the procedures for the formation of thetwo-layered optically reflecting layer 302 in Example 2.

Formation of First Transparent and Electrically Conductive Layer

On the zinc oxide film of the two-layered optically reflecting layer302, there was formed a 10000 Å thick indium oxide film as the firsttransparent and electrically conductive layer 303, in accordance withthe procedures for the formation of the first transparent andelectrically conductive layer 303 in Example 2.

Formation of Semiconductor Active Layer

The resultant obtained in the above was positioned in a conventional RFplasma CVD apparatus, wherein there was formed, on the first transparentand electrically conductive layer 303 (comprising the indium oxidefilm), a semiconductor active layer 304 having a triple cell structurecomprising a bottom cell with a pin junction, a middle cell with a pinjunction, and a top cell with a pin junction being stacked in this orderfrom the substrate side, said bottom cell comprising a 150 Å thickn-type amorphous silicon semiconductor layer, a 900 Å thick i-typeamorphous silicon-germanium semiconductor layer, and a 100 Å thickp-type microcrystalline silicon semiconductor layer being stacked; saidmiddle cell comprising a 150 Å thick n-type amorphous siliconsemiconductor layer, a 900 Å thick i-type amorphous silicon-germaniumsemiconductor layer, and a 100 Å thick p-type microcrystalline siliconsemiconductor layer being stacked; and said top cell comprising a 150 Åthick n-type amorphous silicon semiconductor layer, a 900 Å thick i-typeamorphous silicon semiconductor layer, and a 100 Å thick p-typemicrocrystalline silicon semiconductor layer being stacked.

The n-type amorphous silicon semiconductor layer in each cell was formedusing SiH₄ gas, H₂ gas and PH₃ gas at respective flow rates of 5 sccm,10 sccm, and 0.001 sccm.

The p-type microcrystalline silicon semiconductor layer in each cell wasformed using SiH₄ gas, H₂ gas and BF₃ gas at respective flow rates of 5sccm, 1500 sccm, and 5 sccm.

The i-type amorphous silicon-germanium semiconductor layer in the bottomcell was formed using SiH₄ gas, GeH₄ gas, and H₂ gas at respective flowrates of 3 sccm, 2 sccm, and 10 sccm; the i-type amorphoussilicon-germanium semiconductor layer in the middle cell was formedusing SiH₄ gas, GeH₂ gas, and H₂ gas at respective flow rates of 4 sccm,1 sccm, and 10 sccm; and the i-type amorphous silicon semiconductorlayer in the top cell was formed using SiH₄ gas and H₂ gas at respectiveflow rates of 5 sccm and 10 sccm.

Formation of Second Transparent and Electrically Conductive Layer

On the p-type microcrystalline silicon semiconductor layer of the topcell of the semiconductor active layer 304, there was formed a 660 Åthick ITO film as the second transparent and electrically conductivelayer 308, in accordance with the procedures for forming the secondtransparent and electrically conductive layer 308 in Example 1.

Formation of Grid Electrode (Collecting Electrode)

On the second transparent and electrically conductive layer 308, therewas formed a cruciate grid electrode 309 (a collecting electrode) inaccordance with the procedures for the formation of the grid electrode309 in Example 1.

For the resultant thus obtained, a pair of power output connections wereprovided.

Thus, there was obtained a solar cell (a photovoltaic element).

The resultant solar cell was evaluated in the same manner as in Example1.

As a result, the solar cell was found to have a short-circuit currentdensity of 7.1 mA/cm², an open-circuit voltage of 2.21 V, a fill factor(F.F.) of 0.72, and a photoelectric conversion efficiency of 11.3%.

Separately, for comparison purposes, the following comparative examplewill be described.

Comparative Example 3′

The procedures for the preparation of the solar cell in Example 3 wererepeated, except that the thickness (1000 Å) of the zinc oxide film ofthe two-layered optically reflecting layer 302 was changed to 5000 Å,and the formation of the indium oxide film as the first transparent andelectrically conductive layer 303 was omitted, to thereby obtain a solarcell having a triple cell structure.

The resultant solar cell was evaluated in the same manner as in Example1.

As a result, the solar cell was found to have a short-circuit currentdensity of 6.9 mA/cm², an open-circuit voltage of 2.20 V, a fill factor(F.F.) of 0.72, and a photoelectric conversion efficiency of 10.9%.

Based on the above results obtained in Example 3 and Comparative Example3′, the following facts are understood. The solar cell prepared byemploying the present invention surpasses the comparative solar cellparticularly in terms of the short-circuit current density; this makesthe former solar cell have a greater photoelectric conversion efficiencythan that of the latter solar cell. For the reason for this, it isbelieved that the indium oxide film as the first transparent andelectrically conductive layer formed in accordance with theelectrodeposition film-forming method of the present invention has. anexcellent surface texture, and the indium oxide film having thisexcellent surface texture functions as a back reflector, veryefficiently.

Example 4

In this example, there was prepared a solar cell (a photovoltaicelement) having the configuration shown in FIG. 3 whose secondtransparent and electrically conductive layer (308) comprises an indiumoxide film formed in accordance with the electrodeposition film-formingmethod of the present invention. This solar cell was prepared in thefollowing manner.

Provision of Substrate

There was provided a well-cleaned stainless steel 430BA plate (tradename) as the electrically conductive substrate 301.

Formation of Optically Reflecting Layer

On the substrate 301, there was formed a 1000 Å thick Ag-film as theoptically reflecting layer 302 by DC magnetron sputtering withoutparticularly heating the substrate.

Formation of First Transparent and Electrically Conductive Layer

On the Ag-film as the optically reflecting layer 302 formed on thesubstrate 301, there was formed a 5000 Å thick indium oxide film as thefirst transparent and electrically conductive layer 303 by DC magnetronsputtering without particularly heating the substrate.

Formation of Semiconductor Active Layer

The resultant obtained in the above was positioned in a conventional RFplasma CVD apparatus, wherein a semiconductor active layer 304 having apin junction was formed on the first transparent and electricallyconductive layer 303 (comprising the indium oxide film) by sequentiallyforming a 250 Å thick n-type amorphous silicon semiconductor layer 305with the use of SiH₄ gas, H₂ gas and PH₃ gas at respective flow rates of5 sccm, 10 sccm, and 0.001 sccm; a 2000 Å thick i-type amorphous siliconsemiconductor layer 306 with the use of SiH₄ gas and H₂ gas atrespective flow rates of 5 sccm and 10 sccm; and a 150 Å thick p-typemicrocrystalline silicon semiconductor layer 307 with the use of SiH₄gas, H₂ gas and BF₃ gas at respective flow rates of 5 sccm, 1500 sccm,and 5 sccm.

Formation of Second Transparent and Electrically Conductive Layer

The substrate 301 having the optically reflecting layer 302, the firsttransparent and electrically conductive layer 303 and the semiconductoractive layer 304 formed in this order thereon was positioned in thefilm-forming apparatus shown in FIG. 1 as the negative electrode (103).In accordance with the previously described procedures for forming anindium film by way of electrodeposition process, there was formed a 600Å thick indium oxide film in a rotund form as the second transparent andelectrically conductive layer 308 on the p-type microcrystalline siliconsemiconductor layer 307 of the semiconductor active layer 304, where anaqueous solution obtained by providing an aqueous solution (a)containing indium ion at a concentration of 0.05 mol/l, adding, to saidaqueous solution (a), a nitric acid aqueous solution (b) containingnitric acid at a concentration of 0.02 mol/l in an amount of 1 ml versus500 ml of said aqueous solution, and adding 0.5 g/l of dextrin was usedas the aqueous solution (102), and film formation was conducted for 3minutes while maintaining the aqueous solution (102) at 45° C. In thiscase, a film exhibiting blue interference color was deposited the p-typemicrocrystalline silicon semiconductor layer 307 at a thickness of 600 Åfrom the aqueous solution (102). From this, the film deposited on thep-type microcrystalline silicon semiconductor layer was found to be anindium oxide film.

Formation of Grid Electrode (Collecting Electrode)

On the second transparent and electrically conductive layer 308, therewas formed a cruciate grid electrode 309 (a collecting electrode) inaccordance with the procedures for the formation of the grid electrode309 in Example 1.

For the resultant thus obtained, a pair of power output connections wereprovided.

Thus, there was obtained a solar cell (a photovoltaic element).

The resultant solar cell was evaluated in the same manner as in Example1.

As a result, the solar cell was found to have satisfactory solar cellcharacteristics similar to those well obtained in Example 1, although itlikely has room for improvement in terms of the shunt.

In the following, examples 5 to 11 relating to the electrolessdeposition film-forming method of the present invention will bedescribed.

Example 5

There was provided an aqueous solution obtained by dissolving 0.08 mol/lof indium nitrate and 0.003 mol/l of sodium tartrate in pure water. Theaqueous solution was introduced into a vessel made of heat resistingglass.

While maintaining the aqueous solution contained in the glass vessel at30° C., a Ni-coated steel plate was immersed in the aqueous solution for2 hours. As a result, an about 1000 Å thick indium oxide film wasdeposited on the Ni-coated steel plate.

Evaluation was conducted of the indium oxide film deposited on theNi-coated steel plate. As a result, the indium oxide film was found tohave a conductivity of a sheet resistance of 100 to 10 kΩ/□ and a lighttransmittance of more than 85%, where it exhibited interference color.Then, the indium oxide film deposited on the Ni-coated steel plate wassubjected to X-ray microprobe analysis (XMA). As a result, it was foundto comprise oxygen and indium. On the basis of this result, it wasconfirmed to be an indium oxide film.

Example 6

A glass plate was subjected to sensitizer-activator processing usingstannous chloride and palladium chloride.

The glass plate thus treated was treated in the same manner as inExample 5 by immersing it in the aqueous solution contained in the glassvessel for 4 hours. As a result, an indium oxide film was deposited onthe glass plate at a thickness of about 1000 Å.

Evaluation was conducted of the indium oxide film deposited on the glassplate. As a result, the indium oxide film was found to have aconductivity of a sheet resistance of 100 to 10 kΩ/□ and alighttransmittance of more than 85%, where it exhibited interference color.

Then, the indium oxide film deposited on the glass plate was subjectedto X-ray microprobe analysis (XMA). As a result, it was found tocomprise oxygen and indium. On the basis of this result, it wasconfirmed to be an indium oxide film.

Comparative Example 1

The procedures of Example 5 were repeated, except for replacing theindium nitrate by indium sulfate. However, no film formation occurred.

This result indicates that the presence of nitrate ion in the aqueoussolution is indispensable for causing the formation of an indium oxidefilm.

Comparative Example 2

The procedures of Example 5 were repeated, except for replacing theindium nitrate by indium chloride. However, no film formation occurred.

This result indicates that to the presence of nitrate ion in the aqueoussolution is indispensable for causing the formation of an indium oxidefilm.

Example 7

[Application of the electroless deposition film-forming method in thepreparation of an anti-static member]

There was provided an aqueous solution containing 0.2 mol/l of indiumnitrate and 0.001 mol/l of sodium tartrate.

A stainless steel vessel having an inner size of 350 mm×500 mm×150 mm(depth) was filled with said aqueous solution, and the aqueous solutioncontained in the stainless steel vessel was maintained at 50° C.

Under this condition, a soda-lime glass plate having been subjected tosensitizer-activator processing was immersed in the aqueous solutioncontained in the stainless steel vessel for 5 hours while agitating theaqueous solution.

As a result, an about 1500 Å thick indium oxide film was deposited onthe soda-lime glass plate. The indium oxide film formed on the soda-limeglass plate was subjected to atmospheric annealing at 90° C. for 2hours, whereby the indium oxide developed improved adhesion with thesoda-lime glass plate.

By this, a desirable anti-static indium oxide film could be formed asimple manner.

In comparison with the formation of an anti-static indium oxide film byvacuum deposition or sputtering which uses a large and costly apparatus,a desirable anti-static indium oxide film can be effectively formedaccording to the electroless deposition film-forming method of thepresent invention using a simple apparatus and greatly reducing therequired labor.

Now, the surface of the soda-lime glass plate having the indium oxidefilm thereon was electrically connected to a high-voltage supply unit of+5.5 kV, and scanning was conducted at a speed of 50 mm/second whilecharging the soda-lime glass plate using a corona charger of 30 mm incharging width and 330 mm in length for 30 seconds. After this, theresidual potential of the surface of the soda-lime glass plate wasmeasured using a surface potentiometer.

As a result, the residual potential was found to be +2 V (the errorrange: ±5 V) which indicates an extremely good anti-static ability.

On the other hand, for a soda-lime glass plate (having been subjected tosensitizer-activator processing) with no indium oxide film which wastreated in the same manner as in the above, the residual potential wasfound to be +200 V.

The anti-static finishing of this example can possibly by applied toother glasses, such as a non-alkaline glass, a borosilicate glass, aphosphosilicate glass, a bariumaluminum silicate glass such as a CorningGlass 7059 (trade name) or the like.

Such anti-static-finished glass as above described can be desirably usedas a surface protective glass for a display or as an exhibitionprotective glass for an ornament article, because it can effectivelyavoid dust.

Example 8

[Application of the electroless deposition film-forming method in theproduction of a solar cell (a photovoltaic element)]

This example is an embodiment of the electroless deposition film-formingmethod of the present invention when used in the formation of an upperelectrode of a photovoltaic element (as a solar cell) formed on anelectrically conductive substrate comprising a SUS 430 BA stainlesssteel plate (trademark name).

In this example, the photovoltaic element (as the solar cell) comprisesa photovoltaic element (a solar cell) obtained by forming a 1000 Å thickAl-film on an electrically conductive substrate comprising a SUS 430 BA(bright-annealed) stainless steel plate by DC magnetron sputtering usingan Al-target, forming a 16000 Å thick zinc oxide film by DC magnetronsputtering using a target comprising a sintered zinc oxide material, andforming a semiconductor active layer having a pin junction structure onsaid zinc oxide film, comprising a 200 Å thick n-type amorphous siliconsemiconductor layer formed by plasma CVD, a 2000 Å thick i-typeamorphous silicon semiconductor layer formed by plasma CVD, and a 150 Åthick p-type microcrystalline silicon semiconductor layer formed byplasma CVD being stacked in this order from the substrate side.

Here, description will be made of the constituents of the solar cell.

The foregoing 430 ferritic stainless steel plate as the substrate wasused because it can be readily contacted with a magnet, and therefore,the apparatus in the successive steps can be easily designed. However,it is possible to use a martensitic stainless steel plate, an austeniticstainless steel plate, or an anti-corrosion platinum plate as thesubstrate.

The bright annealing treatment for the stainless steel substrate wasemployed because it is relatively simple and can readily provide arelatively flat surface. However, it is possible for the stainless plateto have a surface applied with surface roughening treatment representedby 2D treatment or to have a mirror surface by mechanical orelectrolytic polishing.

For the formation of the Al-film and zinc oxide film, DC magnetronsputtering was used because the film-forming conditions can be easilyconducted. However, it is possible to employ RF sputtering instead ofthe DC magnetron sputtering. Alternatively, in the case where a metaltarget such as an Al-target is used, it is possible to employ DCsputtering with no aid of a magnet.

For the Al-film, since light having a wavelength close to an energy ofthe forbidden band of the semiconductor material formed on the Al-filmis partially passed through the semiconductor layer, the Al-film servesas a reflecting layer to effectively reflect the light back into thesemiconductor layer. This reflecting layer is necessary to have a highreflectivity to the light having a longer wavelength than that of redlight in the case where the semiconductor layer comprises an amorphoussilicon material. In this respect, it is possible for the reflectinglayer to be constituted by Au, Ag or Cu, as opposed to Al.

The zinc oxide film makes the reflected light sufficiently scatter toefficiently travel into the semiconductor layer. In this connection, byrelatively thickening the zinc oxide film, it is provided withirregularities at the surface. The zinc oxide film can be made to haveconductivity, and therefore, it serves as a part of an electric circuitparticularly when a solar cell is completed, without deteriorating thecharacteristics.

As described above, the semiconductor active layer of the solar cell hasa pin junction structure. However, in the case where the lifetime of thecarrier is long, the semiconductor active layer may be designed to havea pn junction structure. In the case where the pin junction structurecomprises an amorphous silicon material, since the photogeneratedcarriers in the p-type layer and the n-type layer never contribute tothe electric current, these layers are desirably as thin as possible, aslong as they establish the semiconductor junction.

Film formation by the foregoing plasma CVD used for the formation of thepin junction structure is conducted, for instance, in the followingmanner. A film-forming raw material gas principally comprising silanegas is flowed between opposite electrodes while applying an RF powerbetween said electrode to generate plasma in the film-forming rawmaterial gas, whereby the film-forming raw material gas is decomposed tocause the formation of a deposited film on a substrate.

In order to form a p-type semiconductor layer, an element such as B orAl is introduced into a film formed as the p-type semiconductor layer.In order to form an n-type semiconductor layer, an element such as P orAs is introduced into a film formed as the n-type semiconductor layer.

The p-type semiconductor layer in this example is composed of themicrocrystalline material in order for the p-type semiconductor layer tobe high enough in terms of the light transmittance, because it ispositioned on the side through which light is impinged. The use of alayer composed of a microcrystalline material as the p-typesemiconductor layer of a solar cell to make the solar cell have animproved open-circuit voltage is known. In order to form such amicrocrystalline material layer by plasma CVD, a film-forming rawmaterial gas diluted by hydrogen gas in a large amount is used, and anelectric power applied upon the film formation is set at a high level.

Now, in this example, the foregoing photovoltaic element (as the solarcell) was immersed in an aqueous solution containing 0.01 mol/l ofindium nitrate and 0.0001 mol/l of sodium tartrate contained in atreating vessel made of stainless steel while maintaining the aqueoussolution at 40° C. for an hour, whereby a 600 Å thick indium oxide filmwas formed on the p-type semiconductor layer of the photovoltaicelement. The indium oxide film was formed such that it desirablyextended over the entirety of the p-type semiconductor layer whilefilling local defects including pinholes present in the semiconductoractive layer.

In order to passivate short-circuited defects present in thesemiconductor active layer by way of local etching, the resultantobtained in the above was immersed in a saturated aluminum sulfatesolution having a conductivity of 60 S/cm in which a counter electrodewas positioned, and a voltage pulse of −5 V and 0.1 s was intermittentlyapplied between the resultant and the counter electrode, five times. Bythis, portions of the indium oxide film situated in the peripheries ofthe locally short-circuited minute defects including pinholes wereetched, whereby the defects were substantially removed.

After this, a grid electrode (a collecting electrode) comprising Au wasformed on the indium oxide film by means of a conventional heatresistance evaporation process, followed by providing a pair of poweroutput connections. Thus, there was obtained a solar cell.

Using a conventional solar simulator, the resultant solar cell wassubjected to measurement with respect to I-V characteristics underpseudo sunlight having an intensity of 100 mW/cm² and a spectrum of AM1.5. As a result, the solar cell was found to have a short-circuitcurrent density of 14 mA/cm², an open-circuit voltage of 0.97 V, a fillfactor (F. F.) of 0.68, and a photoelectric conversion efficiency of9.23%.

Further, in order to evaluate the transparency of the upper transparentelectrode comprising the indium oxide film, the collection efficiencyagainst light having a wavelength of 400 nm (this collection efficiencywill be hereinafter referred to as Q400) was measured. As a result, itwas found to be 62%. The photoelectric conversion efficiency andcollection efficiency were found to be substantially the same as thoseof a solar cell having an upper transparent electrode comprising atransparent and electrically conductive film formed by vacuum depositionor sputtering.

Hence, it is understood that the solar cell obtained in this example hassatisfactory solar cell characteristics.

These facts indicate that the electroless deposition film-forming methodof the present invention enables the effective formation of a desirableindium oxide film having a sufficient conductivity and a sufficienttransparency, which can be effectively used as the upper transparent andelectrically conductive electrode of a solar cell. In any case, theelectroless deposition film-forming method of the present inventionenables the effective formation of a high quality indium oxide filmusable as a transparent and electrically conductive film in asemiconductor element, in a simple manner and at a reasonable productioncost.

The indium oxide film thus formed can be optionally used also in theproduction of other solar cells such as a solar cell whose i-typesemiconductor layer comprises an amorphous silicon-germanium material, asolar cell having a pn junction structure comprising Si—Cu, In—Se,Ga—As, In—P, or the like, and a multi-cell stacked solar cell having aplurality of pin junction structures.

Example 9

In this example, as well as in the case of Example 8, there was prepareda solar cell (a photovoltaic element) by employing the electrolessdeposition film-forming method of the present invention. Particularly,the electroless deposition film-forming method was employed in theformation of a light incident side electrode layer in a solar cell (aphotovoltaic element) formed on a glass plate.

The solar cell was prepared in the following manner. Provision ofsubstrate:

There was provided a 0.9 mm thick Corning No. 7059 glass plate (tradename) having a polished surface and having been subjected tosensitizer-activator processing as a substrate.

Formation of Light Incident Side Electrode Layer

The glass plate as the substrate was immersed in an aqueous solutioncontaining 0.5 mol/l of indium nitrate and 0.01 mol/l of sodiumpotassium tartrate for 10 hours while maintaining said aqueous solutionat 60° C., whereby a 2 μm thick indium oxide film as a light incidentside electrode layer (hereinafter referred to as upper electrode layer)was deposited on the polished surface of the glass plate as thesubstrate.

The indium oxide film thus formed as the upper electrode layer was foundto have a desirable light-scattering surface provided with minuteirregularities. This light-scattering surface of the indium oxide filmas the upper electrode helps the incident light to effectively scatterincident light so as to pass into a semiconductor layer formed on theupper electrode layer, wherein the optical path is prolonged to increasethe number of photocarriers generated, resulting in an increase in thephotoelectric conversion efficiency of a solar cell.

Formation of Semiconductor Active Layer

On the surface of the upper electrode layer (comprising the indium oxidefilm) except for its predetermined power outputting portion, there wasformed a semiconductor active layer having a pin junction structure bysequentially forming a 220 Å thick p-type se miconductor layercomprising a p-type amorphous silicon carbide (a-SiC) film, a 1800 Åthick i-type semiconductor layer comprising an i-type amorphous silicon(a-Si) film, and a 200 Å thick n-type semiconductor layer comprising ann-type amorphous silicon (a-Si) film by plasma CVD, wherein the p-typeamorphous silicon carbide (a-SiC) film as the p-type semiconductor layerwas formed using a gaseous mixture comprising SiH₄ gas, CH₄ gas, BF₃ gasand H₂ gas; the i-type amorphous silicon (a-Si) film as the i-typesemiconductor layer was formed using a gaseous mixture comprising SiH₄gas and H₂ gas; a nd the n-type amorphous silicon (a-Si) film as then-type semiconductor layer was formed using a gaseous mixture comprisingSiH₄ gas, PH₃ gas and H₂ gas.

Formation of Back Reflecting Layer (Back Reflector)

On the n-type semiconductor layer of the semiconductor active layer,there was formed a 5000 Å thick Al-film as a back reflecting layer bysputtering, wherein during the film formation of said Al-film bysputtering, irregularities were gradually grown a t the surface of theAl-film as the deposition of the Al-film on the n-type semiconductorlayer proceeded.

The irregularities formed at the surface of the Al-film as the backreflecting layer were found to have an average elevation of about 1 um.This indicates that the back reflecting layer has a desirably irregularsurface capable of sufficiently reflecting and scattering incidentlight.

Formation of a Pair of Power Output Terminals

A lead as a power output connection was fixed to the power outputtingportion of the upper electrode layer, and a lead as another power outputconnection was fixed to the back reflecting layer.

The element thus obtained was sealed using a sealing resin by aconventional resin-sealing manner into a module.

Thus, there was obtained a resin-sealed solar cell. The resultant solarcell was evaluated as follows.

Using a conventional solar simulator, the solar cell was subjected tomeasurement with respect to I-V characteristics under pseudo sunlighthaving an intensity of 100 mW/cm² and a spectrum of AM 1.5. As a result,the solar cell was found to have a short-circuit current density of 14.5mA/cm², an open-circuit voltage of 0.92 V, a fill factor (F.F.) of 0.67,and a photoelectric conversion efficiency of 8.94%.

Further, in order to evaluate the transparency of the upper electrodelayer comprising the indium oxide film, the collecting efficiencyagainst light having a wavelength of 400 nm (that is, the Q400) wasmeasured. As a result, it was found to be 58%.

The photoelectric conversion efficiency and collecting efficiency werefound to be substantially the same as those of a solar cell formed on aglass plate and having an upper electrode layer comprising a transparentand electrically conductive film formed by vacuum deposition orsputtering.

Hence, it is understood that the solar cell obtained in this example hassatisfactory solar cell characteristics.

These facts indicate that the electroless deposition film-forming methodof the present invention enables the effective formation of a desirableindium oxide film having a sufficient conductivity and a sufficienttransparency, which can be effectively used as the transparent upperelectrode layer of a solar cell. Particularly, the solar cell whoseupper electrode layer comprises the indium oxide film formed inaccordance with the electroless deposition film-forming method of thepresent invention, exhibits a greater short-circuit current density thanthat of the above described solar cell whose upper electrode layercomprises a transparent and electrically conductive film formed byvacuum deposition or sputtering. This indicates that the transparentupper electrode (on the light incident side) comprising the indium oxidefilm provided with desirable irregularities at the surface exhibitsextremely effective behavior in terms of reflecting and scatteringincident light.

Thus, it is understood that the electroless deposition film-formingmethod of the present invention enables the effective formation of ahigh quality indium oxide film usable as a transparent and electricallyconductive film in a semiconductor element, in a simple manner and at areasonable production cost.

As previously described, the indium oxide film thus formed can beoptionally used also in the production of other solar cells of the typewherein light is impinged from the substrate side, such as a solar cellwhose i-type semiconductor layer comprises an amorphoussilicon-germanium material, and a multi-cell stacked type solar cellhaving a plurality of pin junction structures.

Example 10

[Application of the electroless film-forming method in the production ofan electrophotographic photosensitive member]

In this example, there was prepared an electrophotographicphotosensitive member having a photoconductive layer comprising a chargegeneration layer and a charge transportation layer in the followingmanner.

A cylindrical substrate made of aluminum and having an outer diameter of30 mm and a length of 260 mm was subjected to acid cleaning by means ofnitric acid.

The acid-cleaned surface of the cylindrical substrate was subjected toelectroplating of Ni.

The cylindrical substrate thus treated was immersed in an aqueoussolution containing 0.05 mol/l of indium nitrate and 0.001 mol/l ofsodium potassium tartrate for 10 hours while maintaining the aqueoussolution at 40° C., whereby a 10000 Å thick indium oxide film was formedon the surface of the cylindrical substrate. The indium oxide film thusformed on the cylindrical substrate exhibits an n-type characteristic,and because of this, it functions as a blocking layer which prohibits ahole from being injected from the substrate side and prevents a hole,which is generated in a charge generation layer formed thereon, fromescaping to the substrate side. This blocking layer stably exhibitsblocking characteristics against its environment. This makes theresulting electrophotographic light receiving member have improvedenvironmental characteristics.

Thereafter, the cylindrical substrate having the indium oxide film asthe blocking layer thereon was subjected to dip-coating treatment usinga dispersion comprising copper phthalocyanine (as a charge generationmaterial) dispersed in polyvinyl butyral, followed by drying, to form a1 μm thick charge generation layer on the indium oxide film.

The resultant was subjected to dip-coating treatment using a coatingliquid comprising carbazole (as a charge transportation material)dissolved in polycarbonate, followed by drying, to form a 10 μm thickcharge transportation layer on the charge generation layer.

Thus, there was obtained a cylindrical electrophotographicphotosensitive member.

For the resultant electrophotographic photosensitive member, evaluationwas conducted as will be described below.

The electrophotographic photosensitive member was set to a commerciallyavailable laser beam printer (produced by CANON Kabushiki Kaisha) whichhas been modified for experimental purposes, where its retained darkpotential and light residual potential were measured under normalenvironmental condition with 25° C./60%RH and under a high temperatureand high humidity environmental condition with 35° C./85%RH. Comparisonwas made of the measured results in each case.

As a result, the “retained dark potential/light residual potential”under the normal environmental condition was found to be 680 V/10 V, andthat under the high temperature and high humidity environmentalcondition was found to be 670 V/12 V. These results indicate that thecylindrical electrophotographic photosensitive member obtained in thisexample is good in terms of electrophotographic characteristics.

In this example, as above described, the photoconductive layer was madeto have a functionally divided two-layered structure comprising thecharge generation layer and the charge transportation layer beingstacked. But, this is not limitative. It is possible for thephotoconductive layer to be designed to comprise a single-layeredstructure.

For the photosensitive charge generation material used in the chargegeneration layer, it is not restricted to copper phthalocyanine. Besidesthis, other pigments such as xylene pigment, perylene pigment, andazulenium salt pigment may be optionally used. For the chargetransportation material used in the charge transportation layer, it isnot restricted to carbazole. Besides this, other compounds such asanthracene, pyrene, indole, and pyrazolone may be optionally used.

Example 11

[Application of the electroless deposition film-forming method in theformation of an undercoat layer]

There was provided a non-alkaline glass plate [a barium aluminumsilicate glass plate: a Corning No. 7059 glass plate (trade name)] of 50mm×50 mm in size.

The rear face of this glass plate was covered by a masking tape,followed by subjecting its exposed surface to sensitizer-activatorprocessing.

The glass plate applied with the sensitizer-activator processing wasimmersed in an aqueous solution containing 0.05 mol/l of indium nitrateand 0.001 mol/l of sodium potassium tartrate for an hour whilemaintaining the aqueous solution at 40° C., whereby a 1000 Å thickindium oxide film was deposited on the exposed surface of the glassplate. The glass plate having the indium oxide film was subjected toannealing treatment at 150° C. for 2 hours.

The glass plate thus treated was positioned in an aqueous solutioncontaining 0.01 mol/l of indium nitrate as a substrate, and an indiumcounter electrode was also positioned in the aqueous solution. Then, anelectric current of 10 mA was applied between the substrate and thecounter electrode while maintaining the aqueous solution at 50° C.,whereby a 8000° C. thick indium oxide film was deposited uniformly overthe previously formed indiun oxide film on the glass plate. This indiumoxide film thus deposited was examined by means of SEM. As a result, itwas found to comprise indium oxide crystal particles of about 0.5 μm inaverage dimension.

Thus, it is understood that an indium oxide member produced inaccordance with the electroless deposition film-forming method can beused as a substrate for electroplating.

Now, in the case where such an under coat layer for electroplating isformed in accordance with the electroless deposition film-forming methodof the present invention, even when a layer formed thereon comprises thesame material (that is, indium oxide) as the constituent (indium oxide)of the under coat, the constituent particles can be properly controlledwith respect to their dimension and orientation. This situation broadensthe extent to which indium oxide can be utilized.

As apparent from the above description, the present invention enablesthe effective formation of a high quality indium oxide film having auniform thickness and a uniform property on a large area substrate at alow film-forming temperature, at a high speed (a high deposition rate)and at a reasonable production cost, without using a large scaleapparatus including a vacuum apparatus, a heating apparatus, and thelike. Particularly, the present invention enables the efficientproduction of a desirable photovoltaic element (a solar cell) having animproved photoelectric conversion efficiency at a reasonable productioncost.

What is claimed is:
 1. An aqueous solution for the formation of anindium oxide film by electroless deposition, said aqueous solutioncontaining at least nitrate ion at a concentration of 0.001 to 0.5mol/l, indium ion at a concentration of 0.001 to 0.5 mol/l, and tartrateat a concentration of 0.001 to 0.1 mol/l.
 2. The aqueous solutionaccording to claim 1, wherein the tartrate comprises sodium tartrate orsodium potassium tartrate.
 3. The aqueous solution according to claim 1,wherein the concentration of the tartrate is 1/200 to 1/5 that of theindium ion.
 4. The aqueous solution according to claim 1, wherein thenitrate ion and the indium ion are derived from an ion supply sourcecomprising indium nitrate contained in the aqueous solution.
 5. Theaqueous solution according to claim 4, wherein the indium nitrate has aconcentration of 0.001 to 0.5 mol/l in the aqueous solution.